KSC3503DS دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
KSC3503DS
|
|
حجم فایل
|
70.016
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
7
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi KSC3503DS
-
Transistor Type:
NPN
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
7W
-
Transition Frequency (fT):
150MHz
-
DC Current Gain (hFE@Ic,Vce):
60@10mA,10V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
300V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@20mA,2mA
-
Package:
TO-126-3
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Bulk
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
100mA
-
Voltage - Collector Emitter Breakdown (Max):
300V
-
Vce Saturation (Max) @ Ib, Ic:
600mV @ 2mA, 20mA
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 10V
-
Power - Max:
7W
-
Frequency - Transition:
150MHz
-
Mounting Type:
Through Hole
-
Package / Case:
TO-225AA, TO-126-3
-
Supplier Device Package:
TO-126-3
-
Base Part Number:
KSC3503
-
detail:
Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3
